The effect of nitrogen ion implantation on the physical and dielectric properties of cobalt-doped PZT ceramics
© 2019 Cobalt-doped PZT ceramics (Pb(Zr0.52Ti0.48)1-xCoxO3, where x = 0.005, 0.010, 0.015 and 0.02, were implanted by nitrogen ions at 70 keV with fluences of 1 × 1017 and 5 × 1017 ions/cm2. XRD patterns showed that, following nitrogen ion implantation, the perovskite structure was maintained but a...
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th-cmuir.6653943832-685782020-04-02T15:29:59Z The effect of nitrogen ion implantation on the physical and dielectric properties of cobalt-doped PZT ceramics Benya Cherdhirunkorn Supakorn Surakulananta Jirapa Tangsritrakul David Hall Saweat Intarasiri Physics and Astronomy © 2019 Cobalt-doped PZT ceramics (Pb(Zr0.52Ti0.48)1-xCoxO3, where x = 0.005, 0.010, 0.015 and 0.02, were implanted by nitrogen ions at 70 keV with fluences of 1 × 1017 and 5 × 1017 ions/cm2. XRD patterns showed that, following nitrogen ion implantation, the perovskite structure was maintained but a higher intensity and more sharp (2 0 0) peak was observed, indicating the occurrence of structural distortion and/or ferroelastic domain switching in the near-surface region. Polarisation-electric field hysteresis loop measurements indicated the reduction of saturation polarization, remanent polarization, and coercive field for all samples implanted at the highest N+-ion fluence of 5 × 1017 ions/cm2. The dielectric properties showed reductions in both relative permittivity and dielectric loss, indicating a hardening effect in these nitrogen-ion-implanted samples. 2020-04-02T15:29:59Z 2020-04-02T15:29:59Z 2020-03-01 Journal 22113797 2-s2.0-85076251826 10.1016/j.rinp.2019.102851 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85076251826&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/68578 |
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Physics and Astronomy Benya Cherdhirunkorn Supakorn Surakulananta Jirapa Tangsritrakul David Hall Saweat Intarasiri The effect of nitrogen ion implantation on the physical and dielectric properties of cobalt-doped PZT ceramics |
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© 2019 Cobalt-doped PZT ceramics (Pb(Zr0.52Ti0.48)1-xCoxO3, where x = 0.005, 0.010, 0.015 and 0.02, were implanted by nitrogen ions at 70 keV with fluences of 1 × 1017 and 5 × 1017 ions/cm2. XRD patterns showed that, following nitrogen ion implantation, the perovskite structure was maintained but a higher intensity and more sharp (2 0 0) peak was observed, indicating the occurrence of structural distortion and/or ferroelastic domain switching in the near-surface region. Polarisation-electric field hysteresis loop measurements indicated the reduction of saturation polarization, remanent polarization, and coercive field for all samples implanted at the highest N+-ion fluence of 5 × 1017 ions/cm2. The dielectric properties showed reductions in both relative permittivity and dielectric loss, indicating a hardening effect in these nitrogen-ion-implanted samples. |
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Journal |
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Benya Cherdhirunkorn Supakorn Surakulananta Jirapa Tangsritrakul David Hall Saweat Intarasiri |
author_facet |
Benya Cherdhirunkorn Supakorn Surakulananta Jirapa Tangsritrakul David Hall Saweat Intarasiri |
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Benya Cherdhirunkorn |
title |
The effect of nitrogen ion implantation on the physical and dielectric properties of cobalt-doped PZT ceramics |
title_short |
The effect of nitrogen ion implantation on the physical and dielectric properties of cobalt-doped PZT ceramics |
title_full |
The effect of nitrogen ion implantation on the physical and dielectric properties of cobalt-doped PZT ceramics |
title_fullStr |
The effect of nitrogen ion implantation on the physical and dielectric properties of cobalt-doped PZT ceramics |
title_full_unstemmed |
The effect of nitrogen ion implantation on the physical and dielectric properties of cobalt-doped PZT ceramics |
title_sort |
effect of nitrogen ion implantation on the physical and dielectric properties of cobalt-doped pzt ceramics |
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2020 |
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https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85076251826&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/68578 |
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