Dielectric and ferroelectric properties of annealed B2O 3 doped Ba(Ti0.9Sn0.1)O3 ceramics
In the present work, the posted sintered annealing method was applied for B2O3 doped Ba(Ti0.9Sn0.1)O 3 ceramics. The ceramics were fabricated via a solid state reaction method: sintered at 1350°C for 24 h followed by annealing at 1100°C for 4-32 h. Many electrical properties of the ceramics annealed...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2014
|
| Online Access: | http://www.scopus.com/inward/record.url?eid=2-s2.0-79960739147&partnerID=40&md5=b8074fd70b1e0efdf322f3651b3a6357 http://cmuir.cmu.ac.th/handle/6653943832/7363 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Chiang Mai University |
| Language: | English |
| Summary: | In the present work, the posted sintered annealing method was applied for B2O3 doped Ba(Ti0.9Sn0.1)O 3 ceramics. The ceramics were fabricated via a solid state reaction method: sintered at 1350°C for 24 h followed by annealing at 1100°C for 4-32 h. Many electrical properties of the ceramics annealed at various annealing times were investigated with a variety of methods. Annealing for 4 h produced a sharper phase transition with high dielectric constant. The high dielectric constant of 27,000 was recorded at ferroelectric to paraelectric phase transition temperature of 38°C. This sample also showed a high dielectric tunability of 70%. Ferroelectric performance of the sample was also improved. The improvements in electrical properties were related to the chemical homogeneity of the sample after annealing. Copyright © Taylor &Francis Group, LLC. |
|---|