Cubic Sn from liquid phase epitaxy on InSb

Islets of α-Sn have been epitaxially grown by the dipping liquid phase epitaxy (LPE) technique on (111)B InSb substrates in Sn/Hg melt at 12.5°C. The α-Sn phase is stable to approximately 60°C, which is comparable to the results obtained by molecular beam epitaxy (MBE) and evaporation in UHV techniq...

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Bibliographic Details
Main Authors: Vittaya Amornkitbamrung, Somphong Chatraphorn
Other Authors: Mahidol University
Format: Letter
Published: 2018
Subjects:
Online Access:https://repository.li.mahidol.ac.th/handle/123456789/15329
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Institution: Mahidol University