Temperature programmed desorption of F-doped SnO<inf>2</inf>films deposited by inverted pyrosol technique

Fluorine-doped tin dioxide (FTO) films were deposited on silicon wafers by inverted pyrosol technique using solutions with different doping concentration (F/Sn=0.00, 0.12, 0.75 and 2.50). The physical and electrical properties of the deposited films were analyzed by SEM, XRF, resistivity measurement...

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Bibliographic Details
Main Authors: S. Aukkaravittayapun, C. Thanachayanont, T. Theapsiri, W. Veerasai, Y. Sawada, T. Kondo, S. Tokiwa, T. Nishide
Other Authors: Thailand National Metal and Materials Technology Center
Format: Conference or Workshop Item
Published: 2018
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Online Access:https://repository.li.mahidol.ac.th/handle/123456789/23153
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Institution: Mahidol University
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