Temperature programmed desorption of F-doped SnO<inf>2</inf>films deposited by inverted pyrosol technique
Fluorine-doped tin dioxide (FTO) films were deposited on silicon wafers by inverted pyrosol technique using solutions with different doping concentration (F/Sn=0.00, 0.12, 0.75 and 2.50). The physical and electrical properties of the deposited films were analyzed by SEM, XRF, resistivity measurement...
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Main Authors: | , , , , , , , |
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Format: | Conference or Workshop Item |
Published: |
2018
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Online Access: | https://repository.li.mahidol.ac.th/handle/123456789/23153 |
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Institution: | Mahidol University |
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