Six-band k · p approach to the effects of doping on energy dispersion in p-type strained In<inf>0.15</inf>Ga<inf>0.85</inf>As-Al<inf>0.33</inf>Ga<inf>0.67</inf>As quantum-well structures

• Main Authors: W. Shi, Dao Hua Zhang, Tanakorn Osotchan
• Other Authors: IEEE
• Format: Article
• Published: 2018
• Subjects: Engineering; Physics and Astronomy
• Online Access: https://repository.li.mahidol.ac.th/handle/123456789/25938
• Institution: Mahidol University

We report an application of the six-band Luttinger-Kohn model to the subband energy dispersions in the valence band for the p-type In0.15Ga0.85As-Al0.33Ga0.67As quantum-well (QW) structures. It was found that, in addition to the conventional biaxial compressive strain related to the lattice constant and well width of the structures, the p-type doping also caused a shift of the subband energy levels in the valence band by varying the barrier height. It was also found that the strain of the QW structures was not a constant but was sensitive to the p-type doping intensity, which also induced the shift of the subband energy levels. The calculated results, based on intersubband transitions of the heavy holes and taking the doping-related changes in strain and barrier height into account, were in good agreement with the experimental data, measured using Fourier transform infrared technique.