Localized creation of yellow single photon emitting carbon complexes in hexagonal boron nitride
Single photon emitters in solid-state crystals have received a lot of attention as building blocks for numerous quantum technology applications. Fluorescent defects in hexagonal boron nitride (hBN) stand out due to their high luminosity and robust operation at room temperature. The fabrication of id...
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th-mahidol.880412023-07-24T01:01:24Z Localized creation of yellow single photon emitting carbon complexes in hexagonal boron nitride Kumar A. Mahidol University Engineering Single photon emitters in solid-state crystals have received a lot of attention as building blocks for numerous quantum technology applications. Fluorescent defects in hexagonal boron nitride (hBN) stand out due to their high luminosity and robust operation at room temperature. The fabrication of identical emitters at pre-defined sites is still challenging, which hampers the integration of these defects in optical systems and electro-optical devices. Here, we demonstrate the localized fabrication of hBN emitter arrays by electron beam irradiation using a standard scanning electron microscope with deep sub-micron lateral precision. The emitters are created with a high yield and a reproducible spectrum peaking at 575 nm. Our measurements of optically detected magnetic resonance have not revealed any addressable spin states. Using density functional theory, we attribute the experimentally observed emission lines to carbon-related defects, which are activated by the electron beam. Our scalable approach provides a promising pathway for fabricating room temperature single photon emitters in integrated quantum devices. 2023-07-23T18:01:24Z 2023-07-23T18:01:24Z 2023-07-01 Article APL Materials Vol.11 No.7 (2023) 10.1063/5.0147560 2166532X 2-s2.0-85164806042 https://repository.li.mahidol.ac.th/handle/123456789/88041 SCOPUS |
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Single photon emitters in solid-state crystals have received a lot of attention as building blocks for numerous quantum technology applications. Fluorescent defects in hexagonal boron nitride (hBN) stand out due to their high luminosity and robust operation at room temperature. The fabrication of identical emitters at pre-defined sites is still challenging, which hampers the integration of these defects in optical systems and electro-optical devices. Here, we demonstrate the localized fabrication of hBN emitter arrays by electron beam irradiation using a standard scanning electron microscope with deep sub-micron lateral precision. The emitters are created with a high yield and a reproducible spectrum peaking at 575 nm. Our measurements of optically detected magnetic resonance have not revealed any addressable spin states. Using density functional theory, we attribute the experimentally observed emission lines to carbon-related defects, which are activated by the electron beam. Our scalable approach provides a promising pathway for fabricating room temperature single photon emitters in integrated quantum devices. |
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title |
Localized creation of yellow single photon emitting carbon complexes in hexagonal boron nitride |
title_short |
Localized creation of yellow single photon emitting carbon complexes in hexagonal boron nitride |
title_full |
Localized creation of yellow single photon emitting carbon complexes in hexagonal boron nitride |
title_fullStr |
Localized creation of yellow single photon emitting carbon complexes in hexagonal boron nitride |
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Localized creation of yellow single photon emitting carbon complexes in hexagonal boron nitride |
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localized creation of yellow single photon emitting carbon complexes in hexagonal boron nitride |
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2023 |
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https://repository.li.mahidol.ac.th/handle/123456789/88041 |
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1781413800215314432 |