Alternating current properties of bulk- and nanosheet-graphitic carbon nitride compacts at elevated temperatures

The investigations of temperature-dependent electrical properties in graphitic carbon nitride (g-C3N4) have been largely performed at/below room temperature on devices commonly fabricated by vacuum techniques, leaving the gap to further explore its behaviors at high-temperature. We reported herein t...

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Main Author: Maluangnont T.
Other Authors: Mahidol University
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Published: 2023
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Online Access:https://repository.li.mahidol.ac.th/handle/123456789/90013
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spelling th-mahidol.900132023-09-16T01:01:14Z Alternating current properties of bulk- and nanosheet-graphitic carbon nitride compacts at elevated temperatures Maluangnont T. Mahidol University Chemical Engineering The investigations of temperature-dependent electrical properties in graphitic carbon nitride (g-C3N4) have been largely performed at/below room temperature on devices commonly fabricated by vacuum techniques, leaving the gap to further explore its behaviors at high-temperature. We reported herein the temperature dependence (400 → 35 °C) of alternating current (AC) electrical properties in bulk- and nanosheet-g-C3N4 compacts simply prepared by pelletizing the powder. The bulk sample was synthesized via the direct heating of urea, and the subsequent HNO3-assisted thermal exfoliation yielded the nanosheet counterpart. Their thermal stability was confirmed by variable-temperature X-ray diffraction, demonstrating reversible interlayer expansion/contraction upon heating/cooling with the thermal expansion coefficient of 2.2 × 10−5-3.1 × 10−5 K−1. It is found that bulk- and nanosheet-g-C3N4 were highly insulating (resistivity ρ ∼ 108 Ω cm unchanged with temperature), resembling layered van der Waals materials such as graphite fluoride but unlike electronically insulating oxides. Likewise, the dielectric permittivity ϵ′, loss tangent tan δ, refractive index n, dielectric heating coefficient J, and attenuation coefficient α, were weakly temperature- and frequency-dependent (103-105 Hz). The experimentally determined ϵ′ of bulk-g-C3N4 was reasonably close to the in-plane static dielectric permittivity (8 vs. 5.1) deduced from first-principles calculation, consistent with the anisotropic structure. The nanosheet-g-C3N4 exhibited a higher ϵ′ ∼ 15 while keeping similar tan δ (∼0.09) compared to the bulk counterpart, demonstrating its potential as a highly insulating, stable dielectrics at elevated temperatures. 2023-09-15T18:01:13Z 2023-09-15T18:01:13Z 2023-08-23 Article RSC Advances Vol.13 No.36 (2023) , 25276-25283 10.1039/d3ra04520j 20462069 2-s2.0-85169977386 https://repository.li.mahidol.ac.th/handle/123456789/90013 SCOPUS
institution Mahidol University
building Mahidol University Library
continent Asia
country Thailand
Thailand
content_provider Mahidol University Library
collection Mahidol University Institutional Repository
topic Chemical Engineering
spellingShingle Chemical Engineering
Maluangnont T.
Alternating current properties of bulk- and nanosheet-graphitic carbon nitride compacts at elevated temperatures
description The investigations of temperature-dependent electrical properties in graphitic carbon nitride (g-C3N4) have been largely performed at/below room temperature on devices commonly fabricated by vacuum techniques, leaving the gap to further explore its behaviors at high-temperature. We reported herein the temperature dependence (400 → 35 °C) of alternating current (AC) electrical properties in bulk- and nanosheet-g-C3N4 compacts simply prepared by pelletizing the powder. The bulk sample was synthesized via the direct heating of urea, and the subsequent HNO3-assisted thermal exfoliation yielded the nanosheet counterpart. Their thermal stability was confirmed by variable-temperature X-ray diffraction, demonstrating reversible interlayer expansion/contraction upon heating/cooling with the thermal expansion coefficient of 2.2 × 10−5-3.1 × 10−5 K−1. It is found that bulk- and nanosheet-g-C3N4 were highly insulating (resistivity ρ ∼ 108 Ω cm unchanged with temperature), resembling layered van der Waals materials such as graphite fluoride but unlike electronically insulating oxides. Likewise, the dielectric permittivity ϵ′, loss tangent tan δ, refractive index n, dielectric heating coefficient J, and attenuation coefficient α, were weakly temperature- and frequency-dependent (103-105 Hz). The experimentally determined ϵ′ of bulk-g-C3N4 was reasonably close to the in-plane static dielectric permittivity (8 vs. 5.1) deduced from first-principles calculation, consistent with the anisotropic structure. The nanosheet-g-C3N4 exhibited a higher ϵ′ ∼ 15 while keeping similar tan δ (∼0.09) compared to the bulk counterpart, demonstrating its potential as a highly insulating, stable dielectrics at elevated temperatures.
author2 Mahidol University
author_facet Mahidol University
Maluangnont T.
format Article
author Maluangnont T.
author_sort Maluangnont T.
title Alternating current properties of bulk- and nanosheet-graphitic carbon nitride compacts at elevated temperatures
title_short Alternating current properties of bulk- and nanosheet-graphitic carbon nitride compacts at elevated temperatures
title_full Alternating current properties of bulk- and nanosheet-graphitic carbon nitride compacts at elevated temperatures
title_fullStr Alternating current properties of bulk- and nanosheet-graphitic carbon nitride compacts at elevated temperatures
title_full_unstemmed Alternating current properties of bulk- and nanosheet-graphitic carbon nitride compacts at elevated temperatures
title_sort alternating current properties of bulk- and nanosheet-graphitic carbon nitride compacts at elevated temperatures
publishDate 2023
url https://repository.li.mahidol.ac.th/handle/123456789/90013
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