Application of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOS

by Kaharudin, K.E., Salehuddin, F., Zain, A.S.M., Aziz, M.N.I.A., Ahmad, I.
Published 2017

Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio

by Kaharudin, K.E., Salehuddin, F., Hamidon, A.H., Aziz, M.N.I.A., Ahmad, I.
Published 2017

Application of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOS

by Kaharudin K.E., Salehuddin F., Zain A.S.M., Aziz M.N.I.A., Ahmad I.
Published 2023

Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio

by Kaharudin K.E., Salehuddin F., Hamidon A.H., Aziz M.N.I.A., Ahmad I.
Published 2023

Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structure

by Kaharudin, K.E., Salehuddin, F., Soin, N., Zain, A.S.M., Aziz, M.N.I.A., Ahmad, I.
Published 2017

Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structure

by Kaharudin K.E., Salehuddin F., Soin N., Zain A.S.M., Aziz M.N.I.A., Ahmad I.
Published 2023