Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD

بواسطة Ge, Jia, Tang, Muzhi, Wong, Johnson Kai Chi, Rolf, Arnold Stangl, Zhang, Zhenhao, Dippell, Torsten, Doerr, Manfred, Hohn, Oliver, Huber, Marco, Wohlfart, Peter, Aberle, Armin Gerhard, Mueller, Thomas
منشور في 2016