Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD
10.1109/JPHOTOV.2015.2397593
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Main Authors: | , , , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Published: |
IEEE Electron Devices Society
2016
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/123446 |
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Institution: | National University of Singapore |