Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD

Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD

10.1109/JPHOTOV.2015.2397593

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Bibliographic Details
Main Authors: Ge, Jia, Tang, Muzhi, Wong, Johnson Kai Chi, Rolf, Arnold Stangl, Zhang, Zhenhao, Dippell, Torsten, Doerr, Manfred, Hohn, Oliver, Huber, Marco, Wohlfart, Peter, Aberle, Armin Gerhard, Mueller, Thomas
Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
Format: Article
Published: IEEE Electron Devices Society 2016
Online Access:http://scholarbank.nus.edu.sg/handle/10635/123446
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Institution: National University of Singapore
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Summary:10.1109/JPHOTOV.2015.2397593

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