Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD
10.1109/JPHOTOV.2015.2397593
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IEEE Electron Devices Society
2016
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/123446 |
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sg-nus-scholar.10635-1234462024-11-12T21:35:03Z Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD Ge, Jia Tang, Muzhi Wong, Johnson Kai Chi Rolf, Arnold Stangl Zhang, Zhenhao Dippell, Torsten Doerr, Manfred Hohn, Oliver Huber, Marco Wohlfart, Peter Aberle, Armin Gerhard Mueller, Thomas SOLAR ENERGY RESEARCH INST OF S'PORE 10.1109/JPHOTOV.2015.2397593 IEEE Journal of Photovoltaics 5 3 705-710 2016-04-29T06:06:17Z 2016-04-29T06:06:17Z 2015 Article Ge, Jia, Tang, Muzhi, Wong, Johnson Kai Chi, Rolf, Arnold Stangl, Zhang, Zhenhao, Dippell, Torsten, Doerr, Manfred, Hohn, Oliver, Huber, Marco, Wohlfart, Peter, Aberle, Armin Gerhard, Mueller, Thomas (2015). Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD. IEEE Journal of Photovoltaics 5 (3) : 705-710. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2015.2397593 21563381 http://scholarbank.nus.edu.sg/handle/10635/123446 000353550500001 IEEE Electron Devices Society |
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Singapore Singapore |
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| description |
10.1109/JPHOTOV.2015.2397593 |
| author2 |
SOLAR ENERGY RESEARCH INST OF S'PORE |
| author_facet |
SOLAR ENERGY RESEARCH INST OF S'PORE Ge, Jia Tang, Muzhi Wong, Johnson Kai Chi Rolf, Arnold Stangl Zhang, Zhenhao Dippell, Torsten Doerr, Manfred Hohn, Oliver Huber, Marco Wohlfart, Peter Aberle, Armin Gerhard Mueller, Thomas |
| format |
Article |
| author |
Ge, Jia Tang, Muzhi Wong, Johnson Kai Chi Rolf, Arnold Stangl Zhang, Zhenhao Dippell, Torsten Doerr, Manfred Hohn, Oliver Huber, Marco Wohlfart, Peter Aberle, Armin Gerhard Mueller, Thomas |
| spellingShingle |
Ge, Jia Tang, Muzhi Wong, Johnson Kai Chi Rolf, Arnold Stangl Zhang, Zhenhao Dippell, Torsten Doerr, Manfred Hohn, Oliver Huber, Marco Wohlfart, Peter Aberle, Armin Gerhard Mueller, Thomas Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD |
| author_sort |
Ge, Jia |
| title |
Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD |
| title_short |
Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD |
| title_full |
Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD |
| title_fullStr |
Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD |
| title_full_unstemmed |
Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD |
| title_sort |
investigation of wide process temperature window for amorphous silicon suboxide thin-film passivation deposited by inductively coupled pecvd |
| publisher |
IEEE Electron Devices Society |
| publishDate |
2016 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/123446 |
| _version_ |
1821223066677542912 |