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Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD
Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD
by Ge, Jia, Tang, Muzhi, Wong, Johnson Kai Chi, Rolf, Arnold Stangl, Zhang, Zhenhao, Dippell, Torsten, Doerr, Manfred, Hohn, Oliver, Huber, Marco, Wohlfart, Peter, Aberle, Armin Gerhard, Mueller, Thomas
Published 2016
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