The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping

بواسطة Gu, Chenjie, Zhou, Canliang, Ang, Diing Shenp, Ju, Xin, Gu, Renyuan, Duan, Tianli
منشور في 2019

A vacancy-interstitial defect pair model for positive-bias temperature stress-induced electron trapping transformation in the high-κ gate n-MOSFET

بواسطة Gu, Chenjie, Ang, Diing Shenp, Gao, Yuan, Gu, Renyuan, Zhao, Ziqi, Zhu, Chao
منشور في 2018