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1

The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping

The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping

by Gu, Chenjie, Zhou, Canliang, Ang, Diing Shenp, Ju, Xin, Gu, Renyuan, Duan, Tianli
Published 2019

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2

A vacancy-interstitial defect pair model for positive-bias temperature stress-induced electron trapping transformation in the high-κ gate n-MOSFET

A vacancy-interstitial defect pair model for positive-bias temperature stress-induced electron trapping transformation in the high-κ gate n-MOSFET

by Gu, Chenjie, Ang, Diing Shenp, Gao, Yuan, Gu, Renyuan, Zhao, Ziqi, Zhu, Chao
Published 2018

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