GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack

by Gao, F., Lee, S.J., Li, R., Whang, S.J., Balakumar, S., Chi, D.Z., Kean, C.C., Vicknesh, S., Tung, C.H., Kwong, D.-L.
Published 2014