Improved OFF-state breakdown voltage in AlGaN/GaN HEMTs grown on 150-mm diameter silicon-on-insulator (SOI) substrate

by Dolmanan, S. B., Teo, S. L., Arulkumaran, Subramaniam, Lin, Vivian Kaixin, Ng, Geok Ing, Vicknesh, Sahmuganathan, Tan, Joyce Pei Ying, Kumar, M. Krishna, Tripathy, Sudhiranjan
Published 2013

Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator

by Bera, L. K., Tham, W. H., Kajen, R. S., Dolmanan, S. B., Kumar, M. Krishna, Lin, Vivian Kaixin, Ang, Diing Shenp, Bhat, T. N., Yakovlev, N., Tripathy, Sudhiranjan
Published 2014

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

by Dolmanan, S. B., Kajen, R. S., Bera, L. K., Teo, S. L., Wang, W. Z., Li, H., Lee, D., Han, S., Tripathy, Sudhiranjan, Lin, Vivian Kaixin, Tan, Joyce Pei Ying, Kumar, M. Krishna, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Todd, Shane, Lo, Guo-Qiang
Published 2013