Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy

بواسطة Huo, Lili, Lingaparthi, Ravikiran, Dharmarasu, Nethaji, Radhakrishnan, K., Chan, Casimir
منشور في 2023

Enhanced performance of ultraviolet AlGaN/GaN photo-HEMTs by optimized channel isolation schemes

بواسطة Mondal, Ramit Kumar, Xiong, Zhongshu, Ghimire, Mohan Kumar, Lingaparthi, Ravikiran, Nethaji, Dharmarasu, Radhakrishnan, K., Kim, Munho
منشور في 2024