Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack

by Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Kumar, Chandramohan Manoj, Teo, Khoon Leng, Ranjan, Kumud
Published 2015

In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V

by Teo, Khoon Leng, Ng, Geok Ing, Ranjan, Kumud, Shoron, O. F., Arulkumaran, Subramaniam, Rajan, S., Dolmanan, S. B., Manoj Kumar, Chandra Mohan, Tripathy, S.
Published 2015