On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2 O3

by Hoex, B., Gielis, J.J.H., Van De Sanden, M.C.M., Kessels, W.M.M.
Published 2014

Surface passivation of phosphorus-diffused n +-type emitters by plasma-assisted atomic-layer deposited Al 2O 3

by Hoex, B., van de Sanden, M.C.M., Schmidt, J., Brendel, R., Kessels, W.M.M.
Published 2014

Surface passivation of phosphorus-diffused n +-type emitters by plasma-assisted atomic-layer deposited Al 2O 3

by Hoex, B., van de Sanden, M.C.M., Schmidt, J., Brendel, R., Kessels, W.M.M.
Published 2014

In-situ X-ray diffraction analysis of the crystallisation of a-SI:H films deposited by the expanding thermal plasma technique

by Law, F., Hoex, B., Wang, J., Luther, J., Sharma, K., Creatore, M., Van De Sanden, M.C.M.
Published 2014

Kinetic study of solid phase crystallisation of expanding thermal plasma deposited a-Si:H

by Law, F., Hoex, B., Wang, J., Luther, J., Sharma, K., Creatore, M., Van De Sanden, M.C.M.
Published 2014

Stability of Al2O3 and Al2O3/a- SiNx:H stacks for surface passivation of crystalline silicon

by Dingemans, G., Engelhart, P., Seguin, R., Einsele, F., Hoex, B., Van De Sanden, M.C.M., Kessels, W.M.M.
Published 2014