#TITLE_ALTERNATIVE#
ZnO is a semiconductor materials with wide band gap and high exciton energy (~60 eV) in room temperature, ZnO also has good optical transparency and good electrical conductivity. With that properties, ZnO thin film is a promised candidate for various application transparent conductive oxide (TCO), s...
Saved in:
Main Author: | |
---|---|
Format: | Final Project |
Language: | Indonesia |
Online Access: | https://digilib.itb.ac.id/gdl/view/17006 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Institut Teknologi Bandung |
Language: | Indonesia |
Summary: | ZnO is a semiconductor materials with wide band gap and high exciton energy (~60 eV) in room temperature, ZnO also has good optical transparency and good electrical conductivity. With that properties, ZnO thin film is a promised candidate for various application transparent conductive oxide (TCO), solar cell, liquid crystal display (LCD), photocatalytic, gas sencor, etc. <br />
<br />
<br />
<br />
<br />
In this research ZnO thin film is sintesized with chemical bath deposition using Zinc Acetate Dyhidrat (Zn(CH3COOH)2.2H2O) with ammonia solution as precursor solution, and glass as the substrate. In this research the effect of external electric field with maximum 9 kV/cm that applied during deposition process is studied due to growth and structure of ZnO thin. The calcination temperature that used is 550oC. <br />
<br />
<br />
<br />
<br />
ZnO thin film has been successfully deposited on glass substrate by chemical bath deposition method. X-Ray Diffraction (XRD) of sample indicates that the compound is ZnO without impurity. External electric field that applied during deposotion process increases the uniformity of the ZnO thin film grain size, layer thickness linearly at a rate of 15.6 nm/kVcm-1. Optical transmittance in the visible wavelength of the ZnO thin film without external electric field is 52-63%, with band gap 3.92 eV. |
---|