#TITLE_ALTERNATIVE#

ZnO is a semiconductor materials with wide band gap and high exciton energy (~60 eV) in room temperature, ZnO also has good optical transparency and good electrical conductivity. With that properties, ZnO thin film is a promised candidate for various application transparent conductive oxide (TCO), s...

Full description

Saved in:
Bibliographic Details
Main Author: JATNIKA (NIM : 13707015); Dosen Pembimbing : Ir. Ahmad Nuruddin, PhD, RIFQI
Format: Final Project
Language:Indonesia
Online Access:https://digilib.itb.ac.id/gdl/view/17006
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Institut Teknologi Bandung
Language: Indonesia
id id-itb.:17006
spelling id-itb.:170062017-10-09T10:32:50Z#TITLE_ALTERNATIVE# JATNIKA (NIM : 13707015); Dosen Pembimbing : Ir. Ahmad Nuruddin, PhD, RIFQI Indonesia Final Project INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/17006 ZnO is a semiconductor materials with wide band gap and high exciton energy (~60 eV) in room temperature, ZnO also has good optical transparency and good electrical conductivity. With that properties, ZnO thin film is a promised candidate for various application transparent conductive oxide (TCO), solar cell, liquid crystal display (LCD), photocatalytic, gas sencor, etc. <br /> <br /> <br /> <br /> <br /> In this research ZnO thin film is sintesized with chemical bath deposition using Zinc Acetate Dyhidrat (Zn(CH3COOH)2.2H2O) with ammonia solution as precursor solution, and glass as the substrate. In this research the effect of external electric field with maximum 9 kV/cm that applied during deposition process is studied due to growth and structure of ZnO thin. The calcination temperature that used is 550oC. <br /> <br /> <br /> <br /> <br /> ZnO thin film has been successfully deposited on glass substrate by chemical bath deposition method. X-Ray Diffraction (XRD) of sample indicates that the compound is ZnO without impurity. External electric field that applied during deposotion process increases the uniformity of the ZnO thin film grain size, layer thickness linearly at a rate of 15.6 nm/kVcm-1. Optical transmittance in the visible wavelength of the ZnO thin film without external electric field is 52-63%, with band gap 3.92 eV. text
institution Institut Teknologi Bandung
building Institut Teknologi Bandung Library
continent Asia
country Indonesia
Indonesia
content_provider Institut Teknologi Bandung
collection Digital ITB
language Indonesia
description ZnO is a semiconductor materials with wide band gap and high exciton energy (~60 eV) in room temperature, ZnO also has good optical transparency and good electrical conductivity. With that properties, ZnO thin film is a promised candidate for various application transparent conductive oxide (TCO), solar cell, liquid crystal display (LCD), photocatalytic, gas sencor, etc. <br /> <br /> <br /> <br /> <br /> In this research ZnO thin film is sintesized with chemical bath deposition using Zinc Acetate Dyhidrat (Zn(CH3COOH)2.2H2O) with ammonia solution as precursor solution, and glass as the substrate. In this research the effect of external electric field with maximum 9 kV/cm that applied during deposition process is studied due to growth and structure of ZnO thin. The calcination temperature that used is 550oC. <br /> <br /> <br /> <br /> <br /> ZnO thin film has been successfully deposited on glass substrate by chemical bath deposition method. X-Ray Diffraction (XRD) of sample indicates that the compound is ZnO without impurity. External electric field that applied during deposotion process increases the uniformity of the ZnO thin film grain size, layer thickness linearly at a rate of 15.6 nm/kVcm-1. Optical transmittance in the visible wavelength of the ZnO thin film without external electric field is 52-63%, with band gap 3.92 eV.
format Final Project
author JATNIKA (NIM : 13707015); Dosen Pembimbing : Ir. Ahmad Nuruddin, PhD, RIFQI
spellingShingle JATNIKA (NIM : 13707015); Dosen Pembimbing : Ir. Ahmad Nuruddin, PhD, RIFQI
#TITLE_ALTERNATIVE#
author_facet JATNIKA (NIM : 13707015); Dosen Pembimbing : Ir. Ahmad Nuruddin, PhD, RIFQI
author_sort JATNIKA (NIM : 13707015); Dosen Pembimbing : Ir. Ahmad Nuruddin, PhD, RIFQI
title #TITLE_ALTERNATIVE#
title_short #TITLE_ALTERNATIVE#
title_full #TITLE_ALTERNATIVE#
title_fullStr #TITLE_ALTERNATIVE#
title_full_unstemmed #TITLE_ALTERNATIVE#
title_sort #title_alternative#
url https://digilib.itb.ac.id/gdl/view/17006
_version_ 1820745510082838528