#TITLE_ALTERNATIVE#
The performance of Si/Ge/Si quantum dot based floating gate MOS memory including its retention characteristic and programming operation speed has been simulated. The simulation results show the retention characteristic improvement with value up to 109 s or around 10 years while the programming time...
Saved in:
| Main Author: | |
|---|---|
| Format: | Final Project |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/17459 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |