#TITLE_ALTERNATIVE#

• Main Author: MELIOLLA (NIM : 10211019), GRASIA
• Format: Final Project
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/20138
• Institution: Institut Teknologi Bandung

Transistor down-scaling, which aims to improve the functionality of electronic devices, can increase the leakage current. Therefore, modification of MOSFET structure into gate-all-around structure and channel material based on silicon nanowire (SiNW) and carbon nanotube (CNT) was performed to produce miniature of transistors. This paper presents the study results and simulation of electrical characteristics of SiNW-FET and CNT-FET. Modeling and computational methods which used here are ballistic transport and nonequilibrium <br /> <br /> <br /> Green Function formalism. Modeling results for ballistic MOSFET in drain current calculation has been investigated by fitting to experimental data, so the model can be used to extract other quantities that are not measured by the experiments, such as transconductance, conductance of channel, electron injection speed, mobile charge density and semiconductor capacitance. Implementation of ballistic models for SiNW-FET and CNT-FET was performed to compare the performance of both types of NW-FET. By SiNW-FET <br /> <br /> <br /> device model, we obtain Ion of 44.4 &#956;A, with the ratio on to off current Ion / Ioff = 6.72 . 105. On ability to control short channel effects, these results gives low value of SS (~67.71 mV/dec) for SiNW-FET. Transconductance for SiNW-FET is gm = 87.5 &#956;S. Meanwhile, the calculation results for CNT-FET shows Ion of 63.4 &#956;A, with the ratio of Ion/Ioff = 9.58 . 105. By this CNT-FET model, we obtain low value of SS (67.71 mV / dec) and the transconductance gm = 96.9 &#956;S. By comparing all of these quantities for both types of FET, we concludes that the model of CNTFET has better performance than SiNW-FET model.