#TITLE_ALTERNATIVE#
Transistor down-scaling, which aims to improve the functionality of electronic devices, can increase the leakage current. Therefore, modification of MOSFET structure into gate-all-around structure and channel material based on silicon nanowire (SiNW) and carbon nanotube (CNT) was performed to produc...
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| Main Author: | |
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| Format: | Final Project |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/20138 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |