A STUDY OF THE VIBRATION CHARACTERISTICS OF MOS2 THIN FILM USING RAMAN SPECTROSCOPY

• Main Author: MAULANA (NIM : 10210101), RACHMAT
• Format: Final Project
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/23758
• Institution: Institut Teknologi Bandung

MoS2 thin films have been deposited on top silicon and quartz substrates using mechanical exfoliation method. Thin films MoS2 was taken from bulk MoS2 and uniformly smoothed using scotch tape, then deposited on top of each substrates at room temperature. Bulk MoS2 film on top silicon substrate and thin film MoS2 on top quartz substrate. Samples are characterized by SEM (Scanning Elektron Microscopy) to determine morphology of sample, EDS (Energy Dispersive X-Ray Spectroscopy) to determine composition of sample, XRD (X-Ray Diffraction) to determine crystallinity and FTIR (Fourier Transform Infrared) to determine types of binding from infrared active. Furthermore, Raman spectroscopy is performed to determine types of binding from Raman active and estimate the thickness films of samples. The result from SEM shows that thin films MoS2 appears to be flakes covering around 23-35% on the surface of quartz, XRD spectra shows the dominant orientation along c-axis (002). However, the result from FTIR not showing the peaks for infrared active vibration from both samples due to the limited range of vibrational energy on FTIR. Raman spectroscopy shows the peak for raman active vibration and the thickness of thin film MoS2 around 6-8 layers. From these results, it can be concluded that thin films MoS2 have been deposited and the vibrational mode for raman active have been found on samples.