A STUDY OF QUANTUM TUNNELING PHENOMENA AT SHARP-SHAPED FLOATING GATE STRUCTURE ON FLASH MEMORY DEVICE
A study of electrical characteristic of the sharp-shaped floating gate on flash memory cell has been conducted. Specifically, we aim to study quantum tunneling phenomena. It begin with simple electrostatic modeling from which we moved to transmission coefficient calculation using transfer matrix met...
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| Format: | Theses |
| Language: | Indonesia |
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| Online Access: | https://digilib.itb.ac.id/gdl/view/27525 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
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