TUNNELING CURRENT MODELLING IN SPIN-FET

• Main Author: ISTIQOMAH ARIANI - NIM 10213054, TISA
• Format: Final Project
• Language: Indonesia
• Subjects: Fisika
• Online Access: https://digilib.itb.ac.id/gdl/view/31335
• Institution: Institut Teknologi Bandung

<p align="justify">In this final project, spin tunneling currents in spin-FET device are calculated. The device has a heterostructure with Fe-InSb-Fe arrangement. Bulk inversion asymmetry effect and structural inversion asymmetry effect is considered as the main cause of spin polarization that happens in spintronic device. This project begins by doing a comparison of several combination of inversion asymmetry effect in calculating the spin-dependent electron transmittance and polarization for a trapezoidal potential barrier case using Airy function. The largest polarization efficiency is produced by combining both effects together. The spin-dependent electron transmittance and polarization as a function of electron's incoming angle also calculated. The result shows that the incoming angle affects both electron transmittance and its polarization, also the transmittance value differs for each spin state. The electron transmittance and polarization is quasi-symmetrical to the incoming angle. The calculation of the tunneling current is done by utilizing the transmittance and using numerical integration method. The resulting current density shows that its getting bigger for both spin states when bias voltage is raised and smaller when the barrier is raised. Temperature and electron incoming angle also influence the current density. Maximum current density happens when electron comes from perpendicular angle against the barrier.<p align="justify"> <br /> <br />