TUNNELING CURRENT MODELLING IN SPIN-FET
<p align="justify">In this final project, spin tunneling currents in spin-FET device are calculated. The device has a heterostructure with Fe-InSb-Fe arrangement. Bulk inversion asymmetry effect and structural inversion asymmetry effect is considered as the main cause of spin polariz...
Saved in:
| Main Author: | |
|---|---|
| Format: | Final Project |
| Language: | Indonesia |
| Subjects: | |
| Online Access: | https://digilib.itb.ac.id/gdl/view/31335 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |