TCAD simulation of tunnel FET devices
As the conventional metal oxide semiconductor field-effect transistor (MOSFET) keep scaling down to a sub-micron dimension, it became a serious problem. To overcome this problem, devices based on tunneling currents have been proposed as the candidate of MOSFET. The tunnel field-effect transistor (TF...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project |
| Language: | English |
| Published: |
2009
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/17964 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |