Design, fabrication and characterization of a tunnel FET

• Main Author: Chen, Zhixian.
• Other Authors: Yu Hongyu
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• Online Access: http://hdl.handle.net/10356/17918
• Institution: Nanyang Technological University

This report details and demonstrates a vertical silicon nanowire (SiNW) based tunneling field-effect transistor (TFET) using CMOS compatible technology. With Si P+-i-n+ tunneling junction, the TFET with a gate length of ~200 nm exhibits good subthreshold swing of ~70 mV/dec, superior DIBL of ~17 mV/...