TCAD simulation of tunnel FET devices

• Main Author: Ang, Ming Hao
• Other Authors: Pey Kin Leong
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/17964
• Institution: Nanyang Technological University

As the conventional metal oxide semiconductor field-effect transistor (MOSFET) keep scaling down to a sub-micron dimension, it became a serious problem. To overcome this problem, devices based on tunneling currents have been proposed as the candidate of MOSFET. The tunnel field-effect transistor (TF...