OPTIMIZATION ON ITO FILM (INDIUM TIN OXIDE) USING WET CHEMICAL ETCHING AND ANNEALING

• Main Author: Juwita Ismail, Cynthia
• Format: Final Project
• Language: Indonesia
• Subjects: Kimia
• Online Access: https://digilib.itb.ac.id/gdl/view/34572
• Institution: Institut Teknologi Bandung

Sun can be an alternative energy source other than fossil and nuclear for safe and environmentally friendly energy source. However, the efficiency of common solar panel is still lower than conventional energy sources. Thus, efficiency of solar cell needs to be increased by improving the electrical contacts on the circuit. Optimization of indium tin oxide (ITO) as one of solar cell component can be made through wet etching and annealing in a sequence, which aims to increase the transmittance, light trapping effect and electrical conductivity. Wet etching is carried out by varying the concentration of HCl (1M and 2M), temperature (room temperature and 40 oC) and duration of etching process (5-30 minutes, interval 5 minutes). Transmitttance of samples was analyzed by UV-Vis spectrophotometer and its chemical structure was analyzed by Raman spectroscopy. The transmittance data shows that there is no direct correlation between transparency and duration of etching process. The highest transmittance in case of 1M HCl is the specimen that etched for 615 seconds with 80% transmittance in average for ? = 500-640 nm. On the other hand, in the case of 2M HCl, the highest transmittance is achieved by the specimen that etched for 309 seconds. Both specimens have higher transmittance than before the annealing process. Raman data shows that these optimization processes do not change the chemical structure of ITO significantly. This optimization method increases the electric conductivity of ITO film. The highest conductivity is for the specimen that etched 1505 seconds in 1M HCl and 614 seconds in HCl 2M.