Depisition and Characterization of Thin Film Zinc Oxide on Glass Subtrate Modified with Zinc Oxide Seeds
Thin Film Zinc Oxide (ZnO) is a transparent n-type semiconductor within visible light, useful as a transparent conductor for electronic devices and sensors. This undergraduate research is done by depositioning ZnO film on modified glass substrate with seed layer ZnO using spin coating method and...
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Format: | Final Project |
Language: | Indonesia |
Online Access: | https://digilib.itb.ac.id/gdl/view/36755 |
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Institution: | Institut Teknologi Bandung |
Language: | Indonesia |
Summary: | Thin Film Zinc Oxide (ZnO) is a transparent n-type semiconductor within
visible light, useful as a transparent conductor for electronic devices and
sensors.
This undergraduate research is done by depositioning ZnO film on modified
glass substrate with seed layer ZnO using spin coating method and Chemical
Bath Deposition (CBD). Precursor for seed layer ZnO are Zinc Acetate and
Ethanol, While Precursor for CBD solution are Zinc Nitrate and
Hexamethyltetraamine (HMTA). Deposition of thin film ZnO varied by substrate
without modification and with seed layer ZnO modification. Thin film ZnO
characterized using X-Ray Diffraction (XRD), UV-Vis Spectrophotometer, and
Scanning Electron Microscope (SEM).
Optical properties of maximum transmittance obtained 27% for thin film ZnO
on glass substrate without modification, and transmittance decreased along with
the increase in seed layer ZnO on glass substrate. Bandgap value obtained 4,10
eV for thin film ZnO on substrate without modification, and bandgap decreased
along with the increase in seed layer ZnO on glass substrate.
Whole sample of thin film ZnO has similiar X-Ray diffraction pattern. For
thin film ZnO that deposited on substrate without modification has strongest
diffraction at (101) plane, while thin film ZnO on substrate modified seed layer
ZnO having strongest diffraction at the (100) plane.
Thin film ZnO that grows on the surface of modified substrate found in the
form of microrod and nanorod, with diameter size of microrod 2 ?m and diameter
size of nanorod 100 nm respectively. Microrod formed above the nanorod has
the same size as microrod ZnO that grows on substrate without modification. The
growth of microrod ZnO on substrate without modification and with modified
substrate are driven by three dimension growth. As of the growth of nanorod ZnO
on the substrate are driven by two dimension growth following structure
formation of seed layer ZnO on the substrate. |
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