MODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET
In science and technical problems, The Mathematical Equations are one of transformations from science problems through Mathematical Modeling so the existing problems are easier to solve. One of Mathematical Modeling is Partial Differential Equation with the example of Laplace Equation and Poisson Eq...
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| Format: | Final Project |
| Language: | Indonesia |
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| Online Access: | https://digilib.itb.ac.id/gdl/view/41321 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | In science and technical problems, The Mathematical Equations are one of transformations from science problems through Mathematical Modeling so the existing problems are easier to solve. One of Mathematical Modeling is Partial Differential Equation with the example of Laplace Equation and Poisson Equation. The goal is to reveal the wave function as the result of Schrödinger Equation to determine energy level on SG-MOSFET. The methode to determine the wave function was done by making program in MATLAB for Surrounding-Gate Metal-Oxide-Silicon Field-Effect-Transistor device structure and the solution was determined by using finite difference. The Hypotesa is that the wave function is the combination of exponent function and power function. |
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