MODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET
In science and technical problems, The Mathematical Equations are one of transformations from science problems through Mathematical Modeling so the existing problems are easier to solve. One of Mathematical Modeling is Partial Differential Equation with the example of Laplace Equation and Poisson Eq...
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id-itb.:413212019-08-07T13:20:14ZMODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET Iqbal Ibrahim, Mohammad Fisika Indonesia Final Project Fermi-Dirac Integral, Schrödinger Equation, Variable Separation INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/41321 In science and technical problems, The Mathematical Equations are one of transformations from science problems through Mathematical Modeling so the existing problems are easier to solve. One of Mathematical Modeling is Partial Differential Equation with the example of Laplace Equation and Poisson Equation. The goal is to reveal the wave function as the result of Schrödinger Equation to determine energy level on SG-MOSFET. The methode to determine the wave function was done by making program in MATLAB for Surrounding-Gate Metal-Oxide-Silicon Field-Effect-Transistor device structure and the solution was determined by using finite difference. The Hypotesa is that the wave function is the combination of exponent function and power function. text |
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Fisika Iqbal Ibrahim, Mohammad MODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET |
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In science and technical problems, The Mathematical Equations are one of transformations from science problems through Mathematical Modeling so the existing problems are easier to solve. One of Mathematical Modeling is Partial Differential Equation with the example of Laplace Equation and Poisson Equation. The goal is to reveal the wave function as the result of Schrödinger Equation to determine energy level on SG-MOSFET. The methode to determine the wave function was done by making program in MATLAB for Surrounding-Gate Metal-Oxide-Silicon Field-Effect-Transistor device structure and the solution was determined by using finite difference. The Hypotesa is that the wave function is the combination of exponent function and power function. |
format |
Final Project |
author |
Iqbal Ibrahim, Mohammad |
author_facet |
Iqbal Ibrahim, Mohammad |
author_sort |
Iqbal Ibrahim, Mohammad |
title |
MODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET |
title_short |
MODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET |
title_full |
MODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET |
title_fullStr |
MODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET |
title_full_unstemmed |
MODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET |
title_sort |
modeling the wave function on surrounding-gate-mosfet |
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https://digilib.itb.ac.id/gdl/view/41321 |
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