MODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET

In science and technical problems, The Mathematical Equations are one of transformations from science problems through Mathematical Modeling so the existing problems are easier to solve. One of Mathematical Modeling is Partial Differential Equation with the example of Laplace Equation and Poisson Eq...

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Main Author: Iqbal Ibrahim, Mohammad
Format: Final Project
Language:Indonesia
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Online Access:https://digilib.itb.ac.id/gdl/view/41321
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Institution: Institut Teknologi Bandung
Language: Indonesia
id id-itb.:41321
spelling id-itb.:413212019-08-07T13:20:14ZMODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET Iqbal Ibrahim, Mohammad Fisika Indonesia Final Project Fermi-Dirac Integral, Schrödinger Equation, Variable Separation INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/41321 In science and technical problems, The Mathematical Equations are one of transformations from science problems through Mathematical Modeling so the existing problems are easier to solve. One of Mathematical Modeling is Partial Differential Equation with the example of Laplace Equation and Poisson Equation. The goal is to reveal the wave function as the result of Schrödinger Equation to determine energy level on SG-MOSFET. The methode to determine the wave function was done by making program in MATLAB for Surrounding-Gate Metal-Oxide-Silicon Field-Effect-Transistor device structure and the solution was determined by using finite difference. The Hypotesa is that the wave function is the combination of exponent function and power function. text
institution Institut Teknologi Bandung
building Institut Teknologi Bandung Library
continent Asia
country Indonesia
Indonesia
content_provider Institut Teknologi Bandung
collection Digital ITB
language Indonesia
topic Fisika
spellingShingle Fisika
Iqbal Ibrahim, Mohammad
MODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET
description In science and technical problems, The Mathematical Equations are one of transformations from science problems through Mathematical Modeling so the existing problems are easier to solve. One of Mathematical Modeling is Partial Differential Equation with the example of Laplace Equation and Poisson Equation. The goal is to reveal the wave function as the result of Schrödinger Equation to determine energy level on SG-MOSFET. The methode to determine the wave function was done by making program in MATLAB for Surrounding-Gate Metal-Oxide-Silicon Field-Effect-Transistor device structure and the solution was determined by using finite difference. The Hypotesa is that the wave function is the combination of exponent function and power function.
format Final Project
author Iqbal Ibrahim, Mohammad
author_facet Iqbal Ibrahim, Mohammad
author_sort Iqbal Ibrahim, Mohammad
title MODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET
title_short MODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET
title_full MODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET
title_fullStr MODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET
title_full_unstemmed MODELING THE WAVE FUNCTION ON SURROUNDING-GATE-MOSFET
title_sort modeling the wave function on surrounding-gate-mosfet
url https://digilib.itb.ac.id/gdl/view/41321
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