CHARACTERIZATION OF PECVD DOUBLE-CHAMBER FOR FABRICATION OF DELTA-DOPED P-I-N A-SI:H SOLAR CELLS

• Main Author: S. (NIM 20296511), Amiruddin
• Format: Theses
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/4640
• Institution: Institut Teknologi Bandung

<b></I>AbstraCT :</b><I><p align=\"justify\"> <br /> a-Si:H solar cells with delta-doped p-layer have been fabricated using Plasma Enhanced Chemical Vapor Deposition (PECVD) double-chamber. <br /> <p align=\"justify\"> The boron layer was deposited using B2H6 as a dopant gas. The result shows that the good quality boron layer obtained at the flow rate of 1.5 sccm and deposition pressure of 640 mTorr. <br /> <p align=\"justify\"> The result of Ultra Violet-Visible (UV-Vis) and Fourier Transform infrared (FTIR) spectroscopes show that in the visible region, the delta-doped p-layer deposited using double-chamber is more transparent compared to that of the delta-doped deposited using single-chamber and uniform doped film deposited using double-chamber. <br /> <p align=\"justify\"> Optimization of boron layer and further delta-doped p-layer results in a V_oc of 0.624 Volts and 1_sc of 1.512 mA cm^-2 which is better compared to the result of uniform doping where V_oc 0.258 Volts and I_sc 1.03.10<sup.-4</sup> mA <br /> cm^-2.