PENGARUH RAPAT KEADAAN CELAH ENERGI TERHADAP KARAKTERISTIK ID-VG AMORPHOUS SILICON THIN FILM TRANSISTOR (A-SI TFT)
<b>Abstract:<p align=\"justify\"> <br /> The effects of density of state (DOS) function on the ID-VG characteristic of amorphous silicon thin film transistor (a-Si TFT) was simulated. Transport equations of TFT were solved by using finite element method. A Specific form...
Saved in:
| Main Author: | |
|---|---|
| Format: | Theses |
| Language: | Indonesia |
| Subjects: | |
| Online Access: | https://digilib.itb.ac.id/gdl/view/4821 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |