PENGARUH RAPAT KEADAAN CELAH ENERGI TERHADAP KARAKTERISTIK ID-VG AMORPHOUS SILICON THIN FILM TRANSISTOR (A-SI TFT)

PENGARUH RAPAT KEADAAN CELAH ENERGI TERHADAP KARAKTERISTIK ID-VG AMORPHOUS SILICON THIN FILM TRANSISTOR (A-SI TFT)

<b>Abstract:<p align=\"justify\"> <br /> The effects of density of state (DOS) function on the ID-VG characteristic of amorphous silicon thin film transistor (a-Si TFT) was simulated. Transport equations of TFT were solved by using finite element method. A Specific form...

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Main Author: Mardiana Silangen, Patricia
Format: Theses
Language:Indonesia
Subjects:
Fisika
Online Access:https://digilib.itb.ac.id/gdl/view/4821
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Institution: Institut Teknologi Bandung
Language: Indonesia
id id-itb.:4821
spelling id-itb.:48212006-06-28T11:46:16ZPENGARUH RAPAT KEADAAN CELAH ENERGI TERHADAP KARAKTERISTIK ID-VG AMORPHOUS SILICON THIN FILM TRANSISTOR (A-SI TFT) Mardiana Silangen, Patricia Fisika Indonesia Theses INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/4821 <b>Abstract:<p align=\"justify\"> <br /> The effects of density of state (DOS) function on the ID-VG characteristic of amorphous silicon thin film transistor (a-Si TFT) was simulated. Transport equations of TFT were solved by using finite element method. A Specific formula was developed to calculate the drain current of TFT.<p align=\"justify\"> <br /> The effects of tail states and mid gap states of a-Si on ID-VG characteristic of TFT were also investigated. It was found that the tail states of a-Si strongly affected the drain current of TFT. The simulation carried out in this study is able to describe the performance of a-Si TFT. text
institution Institut Teknologi Bandung
building Institut Teknologi Bandung Library
continent Asia
country Indonesia
Indonesia
content_provider Institut Teknologi Bandung
collection Digital ITB
language Indonesia
topic Fisika
spellingShingle Fisika
Mardiana Silangen, Patricia
PENGARUH RAPAT KEADAAN CELAH ENERGI TERHADAP KARAKTERISTIK ID-VG AMORPHOUS SILICON THIN FILM TRANSISTOR (A-SI TFT)
description <b>Abstract:<p align=\"justify\"> <br /> The effects of density of state (DOS) function on the ID-VG characteristic of amorphous silicon thin film transistor (a-Si TFT) was simulated. Transport equations of TFT were solved by using finite element method. A Specific formula was developed to calculate the drain current of TFT.<p align=\"justify\"> <br /> The effects of tail states and mid gap states of a-Si on ID-VG characteristic of TFT were also investigated. It was found that the tail states of a-Si strongly affected the drain current of TFT. The simulation carried out in this study is able to describe the performance of a-Si TFT.
format Theses
author Mardiana Silangen, Patricia
author_facet Mardiana Silangen, Patricia
author_sort Mardiana Silangen, Patricia
title PENGARUH RAPAT KEADAAN CELAH ENERGI TERHADAP KARAKTERISTIK ID-VG AMORPHOUS SILICON THIN FILM TRANSISTOR (A-SI TFT)
title_short PENGARUH RAPAT KEADAAN CELAH ENERGI TERHADAP KARAKTERISTIK ID-VG AMORPHOUS SILICON THIN FILM TRANSISTOR (A-SI TFT)
title_full PENGARUH RAPAT KEADAAN CELAH ENERGI TERHADAP KARAKTERISTIK ID-VG AMORPHOUS SILICON THIN FILM TRANSISTOR (A-SI TFT)
title_fullStr PENGARUH RAPAT KEADAAN CELAH ENERGI TERHADAP KARAKTERISTIK ID-VG AMORPHOUS SILICON THIN FILM TRANSISTOR (A-SI TFT)
title_full_unstemmed PENGARUH RAPAT KEADAAN CELAH ENERGI TERHADAP KARAKTERISTIK ID-VG AMORPHOUS SILICON THIN FILM TRANSISTOR (A-SI TFT)
title_sort pengaruh rapat keadaan celah energi terhadap karakteristik id-vg amorphous silicon thin film transistor (a-si tft)
url https://digilib.itb.ac.id/gdl/view/4821
_version_ 1820663506399133696

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