THE EFFECT OF ALUMINIUM DOPANT ON THE STRUCTURE, OPTICAL AND ELECTRICAL PROPERTIES OF THIN FILMS ZNO GROWTH BY DC-UNBALANCED MAGNETRON SPUTTERING
This research is purpose to analyze the effect of aluminium dopant on ZnO materials with various consentrasions and looking the structural, optical and electrical properties and their application for optoelectronic device. Al:ZnO is grown at room temperature and compared with pure ZnO with the same...
Saved in:
| Main Author: | |
|---|---|
| Format: | Final Project |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/49466 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | This research is purpose to analyze the effect of aluminium dopant on ZnO materials with various consentrasions and looking the structural, optical and electrical properties and their application for optoelectronic device. Al:ZnO is grown at room temperature and compared with pure ZnO with the same deposition temperature. Al:ZnO was grown on silicon substrate using the DC Unbalanced Magnetron Sputtering method. Each sample was characterized using Scanning Electron Microscopy (SEM) and Energy Dispersive X-Ray (EDX) spectroscopy to analyze morphology and atomic percentages. Characterization of X-Ray Diffraction (XRD) to analyze the crystal structure. Characterization uses Photoluminescence (PL) spectroscopy, UV-VIS spectrophotometer to analyze the optical properties of materials, and measurement of I-V with metal-semiconductor-metal (MSM) photodetector structure configuration to analyze the electrical properties of materials.
The research will focus on analyzing the effect of Al doping concentrations on the structural, optical and electrical properties of Al:ZnO. SEM characterization shows a decrease in grain size in the presence of aluminium. Through XRD measurement of doping Al, causing diffraction intensity to increase at the peak (101). In the result of measurement of PL, UV-Vis and I-V meter it can be seen that the value of optical bandgap energy, conductivity, sensitivity and responsiveness of the thin film increases with increasing doping aluminium concentrations. |
|---|