STUDI PENGARUH TEMPERATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION
<p>Abstract:<p align="justify"> <br /> GaN thin film has been grown on sapphire (0001) substrate using a pulsed laser deposition technique. The N2 gass with 100 sccm flow rate, is used to keep the thin film stoichiometric. The growth temperature was varied from 650°C, 6...
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id-itb.:52532006-02-16T09:40:39ZSTUDI PENGARUH TEMPERATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION Widiyandari, Hendri Indonesia Theses INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/5253 <p>Abstract:<p align="justify"> <br /> GaN thin film has been grown on sapphire (0001) substrate using a pulsed laser deposition technique. The N2 gass with 100 sccm flow rate, is used to keep the thin film stoichiometric. The growth temperature was varied from 650°C, 680°C to 700°C. GaN film was analized by mean of Profilometer Dektak 11A, X-Ray Difractometer and Scanning Electron Microscopy.<p align="justify"> The thin film prodused gave single crystalline with orientation (0002) a id (0004) that shown the wurtzite structure. For film grown at 680°C, we obtained an FWHM of 0,4°. The surface morphology showed film growning as isolated islands. <br /> <br /> <br /> Keywords : Gallium nitride, Pulsed Laser Deposition, FWHM, Morphology.. text |
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<p>Abstract:<p align="justify"> <br />
GaN thin film has been grown on sapphire (0001) substrate using a pulsed laser deposition technique. The N2 gass with 100 sccm flow rate, is used to keep the thin film stoichiometric. The growth temperature was varied from 650°C, 680°C to 700°C. GaN film was analized by mean of Profilometer Dektak 11A, X-Ray Difractometer and Scanning Electron Microscopy.<p align="justify"> The thin film prodused gave single crystalline with orientation (0002) a id (0004) that shown the wurtzite structure. For film grown at 680°C, we obtained an FWHM of 0,4°. The surface morphology showed film growning as isolated islands. <br />
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Keywords : Gallium nitride, Pulsed Laser Deposition, FWHM, Morphology.. |
| format |
Theses |
| author |
Widiyandari, Hendri |
| spellingShingle |
Widiyandari, Hendri STUDI PENGARUH TEMPERATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION |
| author_facet |
Widiyandari, Hendri |
| author_sort |
Widiyandari, Hendri |
| title |
STUDI PENGARUH TEMPERATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION |
| title_short |
STUDI PENGARUH TEMPERATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION |
| title_full |
STUDI PENGARUH TEMPERATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION |
| title_fullStr |
STUDI PENGARUH TEMPERATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION |
| title_full_unstemmed |
STUDI PENGARUH TEMPERATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION |
| title_sort |
studi pengaruh temperatur penumbuhan terhadap kualitas film tipis gan ditumbuhkan dengan teknik pulsed laser deposition |
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https://digilib.itb.ac.id/gdl/view/5253 |
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