STUDI KETEBALAN LAPISAN PENYANGGA GAN TERHADAP STRUKTUR KRISTAL DAN SIFAT OPTIK FILM TIPIS GAN DITUMBUHKAN DENGAN METODA PULSED LASER DEPOSITION

• Main Author: Gusti Agung Putra Adnyana, I
• Format: Theses
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/5268
• Institution: Institut Teknologi Bandung

<b>Abstrak</b><p align=\"justify\"> <br /> The influence of the GaN buffer layer thickness on GaN thin films which was grown by pulsed laser deposition (PLD) technique have been studied. The GaN buffer layer itself was deposited at temperature T=450°C and flow rate of nitrogen is 100 sccm. The time buffer layer deposited was varied from 15 to 45 minute. The GaN thin films obtained with this system were characterized using profilometer DEKTAK IIA, X-ray diffraction and UV-vis Spectroscopy. It is pound that the quality crystal and optical properties greatly depends on buffer layer thickness. From X-ray diffraction investigation and UV-vis Spectroscopy analysis show that the GaN thin films grown on GaN buffer layer thickness of 184,6A tend to have a single orientation (0002), and it was improved optical properties with FWHM 0,9° and band gap energy (Eg) = 3,4 eV. better than GaN thin films grown on to buffer layer thickness of 370,2A and 560A.