STUDI KETEBALAN LAPISAN PENYANGGA GAN TERHADAP STRUKTUR KRISTAL DAN SIFAT OPTIK FILM TIPIS GAN DITUMBUHKAN DENGAN METODA PULSED LASER DEPOSITION

• Main Author: Gusti Agung Putra Adnyana, I
• Format: Theses
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/5268
• Institution: Institut Teknologi Bandung

<b>Abstrak</b><p align=\"justify\"> <br /> The influence of the GaN buffer layer thickness on GaN thin films which was grown by pulsed laser deposition (PLD) technique have been studied. The GaN buffer layer itself was deposited at temperature T=450°C and flow rat...