KARAKTERISTIK RESISTANSI DIFERENSIAL NEGATIF DI DALAM SWITCH TEROWONGAN RESONANSI PENGHALANG SEGITIGA GAAS-INGAAS
<b></i>Abstract : </b><i><p align=\"justify\"> <br /> By numerical simulation based on the transfer matrix method, the operation of a triangular-barrier resonant tunnelling switch, GaAs-InGaAs, is demonstrated. An N-shaped negative-differential-resistan...
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| Format: | Theses |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/5480 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | <b></i>Abstract : </b><i><p align=\"justify\"> <br />
By numerical simulation based on the transfer matrix method, the operation of a triangular-barrier resonant tunnelling switch, GaAs-InGaAs, is demonstrated. An N-shaped negative-differential-resistance (NDR) phenomenon due to the resonant tunnelling effect is observed in the current-voltage (I-V) characteristics. The dependence of the tunnelling property on the temperature and well width upon the NDR characteristics are also investigated. The I-V characteristics of the device are sensitive to the temperature and well width variation. As temperature increases, the peak current density J<sub>P</sub>, valley current density J<sub>v</sub>, peak current voltage V<sub>p</sub> and valley current voltage V<sub>v</sub> decrease. When the well width increases, J <sub>p</sub> and J<sub> v</sub>decrease at first, and then increase after a certain point, while the peak to valley current ratio, PVCR, decreases rapidly. |
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