KARAKTERISTIK RESISTANSI DIFERENSIAL NEGATIF DI DALAM SWITCH TEROWONGAN RESONANSI PENGHALANG SEGITIGA GAAS-INGAAS

KARAKTERISTIK RESISTANSI DIFERENSIAL NEGATIF DI DALAM SWITCH TEROWONGAN RESONANSI PENGHALANG SEGITIGA GAAS-INGAAS

<b></i>Abstract : </b><i><p align=\"justify\"> <br /> By numerical simulation based on the transfer matrix method, the operation of a triangular-barrier resonant tunnelling switch, GaAs-InGaAs, is demonstrated. An N-shaped negative-differential-resistan...

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Main Author: Hidayat (NIM 20296003), Achmad
Format: Theses
Language:Indonesia
Online Access:https://digilib.itb.ac.id/gdl/view/5480
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Institution: Institut Teknologi Bandung
Language: Indonesia
id id-itb.:5480
spelling id-itb.:54802006-12-13T09:33:50ZKARAKTERISTIK RESISTANSI DIFERENSIAL NEGATIF DI DALAM SWITCH TEROWONGAN RESONANSI PENGHALANG SEGITIGA GAAS-INGAAS Hidayat (NIM 20296003), Achmad Indonesia Theses INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/5480 <b></i>Abstract : </b><i><p align=\"justify\"> <br /> By numerical simulation based on the transfer matrix method, the operation of a triangular-barrier resonant tunnelling switch, GaAs-InGaAs, is demonstrated. An N-shaped negative-differential-resistance (NDR) phenomenon due to the resonant tunnelling effect is observed in the current-voltage (I-V) characteristics. The dependence of the tunnelling property on the temperature and well width upon the NDR characteristics are also investigated. The I-V characteristics of the device are sensitive to the temperature and well width variation. As temperature increases, the peak current density J<sub>P</sub>, valley current density J<sub>v</sub>, peak current voltage V<sub>p</sub> and valley current voltage V<sub>v</sub> decrease. When the well width increases, J <sub>p</sub> and J<sub> v</sub>decrease at first, and then increase after a certain point, while the peak to valley current ratio, PVCR, decreases rapidly. text
institution Institut Teknologi Bandung
building Institut Teknologi Bandung Library
continent Asia
country Indonesia
Indonesia
content_provider Institut Teknologi Bandung
collection Digital ITB
language Indonesia
description <b></i>Abstract : </b><i><p align=\"justify\"> <br /> By numerical simulation based on the transfer matrix method, the operation of a triangular-barrier resonant tunnelling switch, GaAs-InGaAs, is demonstrated. An N-shaped negative-differential-resistance (NDR) phenomenon due to the resonant tunnelling effect is observed in the current-voltage (I-V) characteristics. The dependence of the tunnelling property on the temperature and well width upon the NDR characteristics are also investigated. The I-V characteristics of the device are sensitive to the temperature and well width variation. As temperature increases, the peak current density J<sub>P</sub>, valley current density J<sub>v</sub>, peak current voltage V<sub>p</sub> and valley current voltage V<sub>v</sub> decrease. When the well width increases, J <sub>p</sub> and J<sub> v</sub>decrease at first, and then increase after a certain point, while the peak to valley current ratio, PVCR, decreases rapidly.
format Theses
author Hidayat (NIM 20296003), Achmad
spellingShingle Hidayat (NIM 20296003), Achmad
KARAKTERISTIK RESISTANSI DIFERENSIAL NEGATIF DI DALAM SWITCH TEROWONGAN RESONANSI PENGHALANG SEGITIGA GAAS-INGAAS
author_facet Hidayat (NIM 20296003), Achmad
author_sort Hidayat (NIM 20296003), Achmad
title KARAKTERISTIK RESISTANSI DIFERENSIAL NEGATIF DI DALAM SWITCH TEROWONGAN RESONANSI PENGHALANG SEGITIGA GAAS-INGAAS
title_short KARAKTERISTIK RESISTANSI DIFERENSIAL NEGATIF DI DALAM SWITCH TEROWONGAN RESONANSI PENGHALANG SEGITIGA GAAS-INGAAS
title_full KARAKTERISTIK RESISTANSI DIFERENSIAL NEGATIF DI DALAM SWITCH TEROWONGAN RESONANSI PENGHALANG SEGITIGA GAAS-INGAAS
title_fullStr KARAKTERISTIK RESISTANSI DIFERENSIAL NEGATIF DI DALAM SWITCH TEROWONGAN RESONANSI PENGHALANG SEGITIGA GAAS-INGAAS
title_full_unstemmed KARAKTERISTIK RESISTANSI DIFERENSIAL NEGATIF DI DALAM SWITCH TEROWONGAN RESONANSI PENGHALANG SEGITIGA GAAS-INGAAS
title_sort karakteristik resistansi diferensial negatif di dalam switch terowongan resonansi penghalang segitiga gaas-ingaas
url https://digilib.itb.ac.id/gdl/view/5480
_version_ 1820663697901617152

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