ANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION
<b></i>Abstract : </b><i><p align=\"justify\"> <br /> In this study, models of deposition mechanism of ZnO thin film grown by metalorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) methods using dietylzinc (DEZ) and H<sub>...
محفوظ في:
| المؤلف الرئيسي: | |
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| التنسيق: | Theses |
| اللغة: | Indonesia |
| الوصول للمادة أونلاين: | https://digilib.itb.ac.id/gdl/view/5482 |
| الوسوم: |
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| الملخص: | <b></i>Abstract : </b><i><p align=\"justify\"> <br />
In this study, models of deposition mechanism of ZnO thin film grown by metalorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) methods using dietylzinc (DEZ) and H<sub>2</sub>O as reactants were constructed. The models were used to obtain information on the relationship among deposition rate as experiment parameters, such as substrate temperature, temperature of DEZ bubbler, and temperature of H<sub>2</sub>O bubbler. The proposed models are able to explain precisely the experiment data. Analysis on the self limiting mechanism phenomenon in the ALD-ZnO process was also performed. Moreover, effects of ultra violet irradiation in MOCVD-ZnO process were also studied. |
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