ANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION

<b></i>Abstract : </b><i><p align=\"justify\"> <br /> In this study, models of deposition mechanism of ZnO thin film grown by metalorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) methods using dietylzinc (DEZ) and H<sub>...

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Main Author: Setiawan (NIM 20296501), Agus
Format: Theses
Language:Indonesia
Online Access:https://digilib.itb.ac.id/gdl/view/5482
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Institution: Institut Teknologi Bandung
Language: Indonesia
id id-itb.:5482
spelling id-itb.:54822006-12-13T11:33:35ZANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION Setiawan (NIM 20296501), Agus Indonesia Theses INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/5482 <b></i>Abstract : </b><i><p align=\"justify\"> <br /> In this study, models of deposition mechanism of ZnO thin film grown by metalorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) methods using dietylzinc (DEZ) and H<sub>2</sub>O as reactants were constructed. The models were used to obtain information on the relationship among deposition rate as experiment parameters, such as substrate temperature, temperature of DEZ bubbler, and temperature of H<sub>2</sub>O bubbler. The proposed models are able to explain precisely the experiment data. Analysis on the self limiting mechanism phenomenon in the ALD-ZnO process was also performed. Moreover, effects of ultra violet irradiation in MOCVD-ZnO process were also studied. text
institution Institut Teknologi Bandung
building Institut Teknologi Bandung Library
continent Asia
country Indonesia
Indonesia
content_provider Institut Teknologi Bandung
collection Digital ITB
language Indonesia
description <b></i>Abstract : </b><i><p align=\"justify\"> <br /> In this study, models of deposition mechanism of ZnO thin film grown by metalorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) methods using dietylzinc (DEZ) and H<sub>2</sub>O as reactants were constructed. The models were used to obtain information on the relationship among deposition rate as experiment parameters, such as substrate temperature, temperature of DEZ bubbler, and temperature of H<sub>2</sub>O bubbler. The proposed models are able to explain precisely the experiment data. Analysis on the self limiting mechanism phenomenon in the ALD-ZnO process was also performed. Moreover, effects of ultra violet irradiation in MOCVD-ZnO process were also studied.
format Theses
author Setiawan (NIM 20296501), Agus
spellingShingle Setiawan (NIM 20296501), Agus
ANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION
author_facet Setiawan (NIM 20296501), Agus
author_sort Setiawan (NIM 20296501), Agus
title ANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION
title_short ANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION
title_full ANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION
title_fullStr ANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION
title_full_unstemmed ANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION
title_sort analisis kinetika deposisi lapisan tipis zno yang ditumbuhkan dengan metode metalorganic chemical vapor deposition dan metode atomic layer deposition
url https://digilib.itb.ac.id/gdl/view/5482
_version_ 1820663698421710848