ANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION
<b></i>Abstract : </b><i><p align=\"justify\"> <br /> In this study, models of deposition mechanism of ZnO thin film grown by metalorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) methods using dietylzinc (DEZ) and H<sub>...
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id-itb.:54822006-12-13T11:33:35ZANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION Setiawan (NIM 20296501), Agus Indonesia Theses INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/5482 <b></i>Abstract : </b><i><p align=\"justify\"> <br /> In this study, models of deposition mechanism of ZnO thin film grown by metalorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) methods using dietylzinc (DEZ) and H<sub>2</sub>O as reactants were constructed. The models were used to obtain information on the relationship among deposition rate as experiment parameters, such as substrate temperature, temperature of DEZ bubbler, and temperature of H<sub>2</sub>O bubbler. The proposed models are able to explain precisely the experiment data. Analysis on the self limiting mechanism phenomenon in the ALD-ZnO process was also performed. Moreover, effects of ultra violet irradiation in MOCVD-ZnO process were also studied. text |
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<b></i>Abstract : </b><i><p align=\"justify\"> <br />
In this study, models of deposition mechanism of ZnO thin film grown by metalorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) methods using dietylzinc (DEZ) and H<sub>2</sub>O as reactants were constructed. The models were used to obtain information on the relationship among deposition rate as experiment parameters, such as substrate temperature, temperature of DEZ bubbler, and temperature of H<sub>2</sub>O bubbler. The proposed models are able to explain precisely the experiment data. Analysis on the self limiting mechanism phenomenon in the ALD-ZnO process was also performed. Moreover, effects of ultra violet irradiation in MOCVD-ZnO process were also studied. |
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Theses |
author |
Setiawan (NIM 20296501), Agus |
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Setiawan (NIM 20296501), Agus ANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION |
author_facet |
Setiawan (NIM 20296501), Agus |
author_sort |
Setiawan (NIM 20296501), Agus |
title |
ANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION |
title_short |
ANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION |
title_full |
ANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION |
title_fullStr |
ANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION |
title_full_unstemmed |
ANALISIS KINETIKA DEPOSISI LAPISAN TIPIS ZNO YANG DITUMBUHKAN DENGAN METODE METALORGANIC CHEMICAL VAPOR DEPOSITION DAN METODE ATOMIC LAYER DEPOSITION |
title_sort |
analisis kinetika deposisi lapisan tipis zno yang ditumbuhkan dengan metode metalorganic chemical vapor deposition dan metode atomic layer deposition |
url |
https://digilib.itb.ac.id/gdl/view/5482 |
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1820663698421710848 |