NONLINEAR ANALYISIS FOR CLASS E SWITCHING POWER AMPLIFIER IN WIDEBAND RF APPLICATION

• Main Author: Oktani, Dessy
• Format: Theses
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/55525
• Institution: Institut Teknologi Bandung

For high frequency wireless digital telecommunication system , the performance of its amplifier has the significant implication to the power consumption. As the secondary effect, high power consumption is affect to battery live, and this is critical matter specially for handheld device. On this research, a class E switching power amplifier for broadband 2.4 GHz is designed and nonlinearity is observed. The circuit design is using HMET from Galium Nitrit to achieve above 50% efficiency. Additional switching transistor added to the Source side to increase the efficiency. Nonlinearity characterization observed by IMD measurement using multi tone signal. The simulation shows that by using the GaN HEMT, efficiency up to 79% with 43 dBm power out and 5 dBm gain can be achieved at the 1-tone input and efficiency up to 78% at the 2-tone input. IMD measurement shows that the amplifier circuit more linear at the jarak antar frekuensi 100 MHz than 20 MHz with the IIP3 at 41.81 dBM and OIP3 at 49.68 dBm.