DESIGN OF FILTERED LOW NOISE AMPLIFIER BASED ON SUBSTRATE INTEGRATED WAVEGUIDE AND BIPOLAR JUNCTION TRANSISTOR
In wireless communication, the demand for more compact radio frequency (RF) receiver applications, relatively low production costs, and excellent performance is a vital necessity. A number of studies were done to meet these requirements. Optimizing the performance of RF receivers focuses mostly o...
Saved in:
| Main Author: | |
|---|---|
| Format: | Theses |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/71423 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | In wireless communication, the demand for more compact radio frequency (RF)
receiver applications, relatively low production costs, and excellent performance
is a vital necessity. A number of studies were done to meet these requirements.
Optimizing the performance of RF receivers focuses mostly on integrating several
RF receiver system components through research. This study discusses the design,
simulation, and implementation of an integrated low noise amplifier (LNA) filter.
The filtered low noise amplifier (FLNA) arrangement comprises of an integrated
transistor-based LNA and a bandpass filter (BPF) produced using the substrate
integrated waveguide (SIW) technique. The suggested FLNA, which is meant to
operate at a center frequency of 2.4 GHz, is designed and fabricated on a flame
retardant (FR) 4 epoxy dielectric substrate of 1.6 mm in thickness. According to the
results of the characterization, the realized FLNA has a -3 dB bandwidth of 980
MHz (1.88 GHz–2.86 GHz) and a gain of 11.012 dB. These results are comparable
to the simulated outcomes, proving the RF's appropriateness. |
|---|