PEROVSKITE SOLAR CELL EFFICIENCY STUDY WITH SIMULATION USING IONMONGER
Perovskite-based solar cells (PSCs) are receiving a lot of attention because of their significant developments. Perovskite material has low exciton binding energy, high optical absorption coefficient, high electron mobility, and very good photovoltaic performance. However, perovskite material has...
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| Format: | Final Project |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/71883 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | Perovskite-based solar cells (PSCs) are receiving a lot of attention because of their significant
developments. Perovskite material has low exciton binding energy, high optical absorption
coefficient, high electron mobility, and very good photovoltaic performance. However,
perovskite material has a soft lattice structure that makes it easy to form defects and allows
ions to quickly move through these defects. The physical processes that occur in perovskite
solar cells such as ion migration and recombination have been found to be related to perovskite
solar cell (PSC) efficiency. In this study, the effect of recombination due to the presence of the
interfacial trap state and the emergence of hysteresis due to ion migration on the efficiency of
perovskite solar cells (PSC) will be studied. The charge carrier transport process in perovskite
solar cell (PSC) devices has been modelled in the drift-diffusion model. IonMonger, a
computational program based on the finite element method, is used to solve the drift-diffusion
model. The solution of the model produces the J-V curve, electric potential curve, electron
distribution, and anion vacancy density distribution. Parameters of perovskite solar cell (PSC)
devices such as perovskite layer thickness, recombination rate, amount of doping in the
transport layer, ion diffusion coefficient, and ion vacancy density were varied to study how ion
migration and recombination can affect cell efficiency. The simulation results show that
recombination due to the existence of the interfacial trap state affects the decrease in Jsc and
Voc and the number of interfacial trap states in the ETL interface has a more dominant effect
than the trap state in the HTL interface. In addition, the simulations show that the formation
of band-bending causes the hysteresis at the interface to be affected by the accumulation of
anion vacancies at the interface.
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